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10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 1 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit flow pack 0 b 600 v / 6 a igbt3 (600v) technology open emitter topology new ultra-compact housing single-screw heat sink mounting dedicated design for motor drive 10-0B066PA006SB-M992F09 flow 0 b housing schematic features target applications types inverter switch collector-emitter voltage v ces 600 v collector current i c t j = t jmax t s = 80 c 8 a repetitive peak collector current i crm t p limited by t jmax 18 a total power dissipation p tot t j = t jmax t s = 80 c 27 w gate-emitter voltage v ges 20 v short circuit ratings t sc t j 150 c 6 s v cc v ge = 15 v 360 v maximum junction temperature t jmax 175 c
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 2 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit inverter diode peak repetitive reverse voltage v rrm 600 v continuous (direct) forward current i f t j = t jmax t s = 80 c 8 a repetitive peak forward current i frm 12 a total power dissipation p tot t j = t jmax t s = 80 c 23 w maximum junction temperature t jmax 175 c module properties thermal properties storage temperature t stg -40+125 c operation temperature under switching condition t jop -40( t jmax - 25) c isolation properties isolation voltage v isol dc test voltage t p = 2 s 4000 v creepage distance min. 12,7 mm clearance min. 12,7 mm comparative tracking index cti > 200
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 3 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max inverter switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,00018 25 5 5,8 6,5 v collector-emitter saturation voltage v cesat 15 6 25 1,1 1,49 1,9 v 125 1,68 collector-emitter cut-off current i ces 0 600 25 0,04 a gate-emitter leakage current i ges 20 0 25 300 na internal gate resistance r g none input capacitance c ies f = 100 khz 0 25 25 368 pf output capacitance c oes 28 reverse transfer capacitance c res 11 gate charge q g 15 180 6 25 42 nc thermal thermal resistance junction to sink r th(j-s) thermal grease thickness 50 m = 1 w/mk 3,50 k/w dynamic turn-on delay time t d(on) r goff = 64 15 300 6 25 105 ns 150 102 rise time t r 25 22 150 28 turn-off delay time t d(off) r gon = 64 25 142 150 164 fall time t f 25 103 150 132 turn-on energy (per pulse) e on q rfwd = 0,3 c 25 0,150 mws q rfwd = 0,8 c 150 0,225 turn-off energy (per pulse) e off 25 0,146 150 0,193
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 4 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max inverter diode static forward voltage v f 6 25 1,58 1,95 v 125 1,50 reverse leakage current i r 600 25 27 a thermal thermal resistance junction to sink r th(j-s) thermal grease thickness 50 m = 1 w/mk 4,20 k/w dynamic peak recovery current i rrm 15 300 6 25 4 a 150 6 reverse recovery time t rr 25 183 ns 150 288 recovered charge q r d i /d t = 219 a/s 25 0,324 c d i /d t = 191 a/s 150 0,775 reverse recovered energy e rec 25 0,059 mws 150 0,156 peak rate of fall of recovery current ( d i rf /d t ) max 25 45 a/s 150 57 thermistor rated resistance r 25 21,5 k deviation of r 100 r/r r 100 = 1486 100 -4,5 +4,5 % power dissipation p 25 210 mw power dissipation constant 25 3,5 mw/ k b-value b (25/50) 25 3884 k b-value b (25/100) 25 3964 k vincotech ntc reference f
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 5 copyright vincotech inverter switch characteristics figure 1. igbt figure 2. igbt typical output characteristics typical out put charact eristics i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v 125 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v figure 3. igbt figure 4. igbt typical transf er charact erist ics transient t hermal impedance as f unction of pulse du ration i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v 125 c r th(j-s) = 3,50 k/w r (k/w) (s) 1,46e-01 3,65e+00 5,40e-01 3,03e-01 1,16e+00 7,07e-02 7,43e-01 1,16e-02 4,93e-01 2,32e-03 4,22e-01 3,00e-04 t j : t j : igbt thermal model values 0 1 2 3 4 5 6 0 2 4 6 8 10 12 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 3 6 9 12 15 18 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 3 6 9 12 15 18 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 7 v 8 v 9 v 10 v 11 v 12 v 13 v 14 v 15 v 16 v 17 v v ge : 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 6 copyright vincotech inverter switch characteristics figure 5. igbt figure 6. igbt gate volt age vs gate charge saf e operating area v ge = f( q g ) i c = f( v ce ) i c = 6 a d = single pulse t s = 80 oc v ge = 15 v t j = t jmax oc figure 7. igbt figure 8. igbt short circuit duration as a f unction of v ge typical short circuit current as a f unction of v ge t p sc = f( v ge ) i sc = f( v ge ) v ce = 600 v v ce 600 v t j 175 oc t j 175 oc 120v 480v 0 2,5 5 7,5 10 12,5 15 17,5 20 0 10 20 30 40 50 60 v v v v g e g e g e g e (v) q qq q g gg g (nc) 0 2 4 6 8 10 12 14 12 12,5 13 13,5 14 14,5 15 t t t t ps c ps c ps c ps c (s) v vv v g e g eg e g e (v) 0 20 40 60 80 100 120 12 13 14 15 16 17 18 19 20 i i i i sc sc sc sc (a) v vv v g e g e g e g e (v) dc 100ms 10ms 1ms 100s 10s 0,01 0,1 1 10 100 1 10 100 1000 i i i i c cc c (a) v vv v c e c ec e c e (v)
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 7 copyright vincotech inverter diode characteristics figure 1. fwd figure 2. fwd typical f orward charact erist ics transient t hermal impedance as a f unct ion of pulse widt h i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t 125 c r th(j-s) = 4,20 k/w fwd thermal model values r (k/w) (s) 1,59e-01 2,28e+00 6,49e-01 1,47e-01 9,61e-01 3,33e-02 9,96e-01 6,52e-03 7,19e-01 1,27e-03 7,17e-01 1,89e-04 t j : 0 3 6 9 12 15 18 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 1 10 -2 10 -1 10 0 thermistor characteristics thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r () t (c) ntc-typical temperature characteristic
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 8 copyright vincotech inverter switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 150 c v ce = 300 v t j : 150 c v ge = 15 v v ge = 15 v r gon = 64 i c = 6 a r goff = 64 figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 150 c v ce = 300 v t j : 150 c v ge = 15 v v ge = 15 v r gon = 64 i c = 6 a e rec e rec 0 0,05 0,1 0,15 0,2 0,25 0 2 4 6 8 10 12 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,05 0,1 0,15 0,2 0 32 64 96 128 160 192 224 256 288 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e ee e o ff o ff o ff o ff e off 0 0,1 0,2 0,3 0,4 0,5 0 2 4 6 8 10 12 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e on on on on e off e on e o ff o ffo ff o ff 0 0,1 0,2 0,3 0,4 0,5 0 32 64 96 128 160 192 224 256 288 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) )
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 9 copyright vincotech inverter switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 150 c t j = 150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 64 i c = 6 a r goff = 64 figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 64 i c = 6 a t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 2 4 6 8 10 12 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 32 64 96 128 160 192 224 256 288 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,1 0,2 0,3 0,4 0,5 0 32 64 96 128 160 192 224 256 288 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr 0 0,1 0,2 0,3 0,4 0 2 4 6 8 10 12 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 10 copyright vincotech inverter switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 64 i c = 6 a figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 64 i c = 6 a i rm i rm 0 2 4 6 8 10 0 32 64 96 128 160 192 224 256 288 i i i i r m r m r m r m (a) (a) (a) (a) r rr r g o n g o n g o n g o n ( (( ( ) )) ) q r q r 0 0,2 0,4 0,6 0,8 0 32 64 96 128 160 192 224 256 288 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i rm i rm 0 2 4 6 8 10 0 2 4 6 8 10 12 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 0,3 0,6 0,9 1,2 0 2 4 6 8 10 12 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 11 copyright vincotech inverter switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unction of igbt t urn on gat e resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 64 i c = 6 a 0 300 600 900 1200 0 32 64 96 128 160 192 224 256 288 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 50 100 150 200 250 0 2 4 6 8 10 12 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 64 r goff = 64 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c module module module module i i i i c cc c chip chip chip chip
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 12 copyright vincotech inverter switching characteristics t j 150 c r gon 64 r goff 64 figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of t dof f , t eof f (t eof f = int egrat ing t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of tdon, t eon (t eon = int egrating t ime f or eon) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 310 v v c (100%) = 310 v i c (100%) = 6 a i c (100%) = 6 a t doff = 0,164 s t don = 0,102 s t eoff = 0,519 s t eon = 0,273 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of t f turn-on swit ching wavef orms & def init ion of tr v c (100%) = 310 v v c (100%) = 310 v i c (100%) = 6 a i c (100%) = 6 a t f = 0,132 s t r = 0,028 s = == i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,15 -0,08 -0,01 0,06 0,13 0,2 0,27 0,34 0,41 0,48 0,55 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 -0,05 0 0,05 0,1 0,15 0,2 0,25 0,3 % t tt t ( s) ( s)( s) ( s) v ce i c t f i c 10% i c 90% -25 0 25 50 75 100 125 150 175 200 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 % t tt t (s) (s)(s) (s) t r v ce i c
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 13 copyright vincotech inverter switching characteristics figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 1,86 kw p on (100%) = 1,86 kw e off (100%) = 0,19 mj e on (100%) = 0,23 mj t eoff = 0,519 s t eon = 0,27 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v f (100%) = 310 v i f (100%) = 6 a i rrm (100%) = -6 a t rr = 0,288 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,1 -0,05 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 150 175 200 2,97 3,02 3,07 3,12 3,17 3,22 3,27 3,32 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 3,45 3,5 3,55 3,6 3,65 3,7 % t tt t (s) (s)(s) (s) i f v f fitted
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 14 copyright vincotech inverter switching characteristics figure 8. fwd figure 9. fwd turn-on swit ching wavef orms & def init ion of t qr (t qr = int egrat ing t ime f or q r ) turn-on swit ching wavef orms & def init ion of t erec (t erec = int egrating t ime f or e rec ) i f (100%) = 6 a p rec (100%) = 1,86 kw q r (100%) = 0,78 c e rec (100%) = 0,16 mj t qr = 1,00 s t erec = 1,00 s t qr -100 -75 -50 -25 0 25 50 75 100 125 3,05 3,25 3,45 3,65 3,85 4,05 4,25 % t tt t (s) (s)(s) (s) i f q r -25 0 25 50 75 100 125 3,05 3,25 3,45 3,65 3,85 4,05 4,25 % t tt t (s) (s)(s) (s) p rec e rec t erec
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 15 copyright vincotech type&ver date code vin & lot serial&ul tttttttvv wwyy vin lllll ssss ul type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 27,8 0 g6 2 24,9 0 e6 3 19,1 0 g5 4 16,2 0 e5 5 11,6 0 ntc2 6 7,6 0 ntc1 7 2,9 0 e4 8 0 0 g4 9 0 13,7 u 10 2,9 13,7 g1 11 8,8 13,7 dc+ 12 14,6 13,7 v 13 17,5 13,7 g2 14 24,9 13,7 g3 15 27,8 13,7 w ordering code 10-0B066PA006SB-M992F09 pin table [mm] name nn-nnnnnnnnnnnnnn outline text datamatrix version without thermal paste 17mm housing with solder pins ordering code & marking nn-nnnnnnnnnn nnnn-tttttttvv vin lllll wwyy ssss ul
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 16 copyright vincotech pinout inverter diode identification comment 600 v voltage current function 6 a inverter switch 6 a id igbt fwd component t1,t2,t3,t4,t5,t6 d1,d2,d3,d4,d5,d6 600 v ntc thermistor thermistor
10-0B066PA006SB-M992F09 datasheet 23 jun. 2017 / revision 3 17 copyright vincotech disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction standard packaging quantity (spq) 160 >spq standard 0-0B066PA006SB-M992F09-d3-14 23 jun. 2017

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